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Abstract Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling andg-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors. 

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO_x. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices. 

There exists an interplay between antiferrodistortive phase transition and transport in SrTiO 3 via the Hall scattering factor. 

The strong Ising spin–orbit coupling in certain two-dimensional transition metal dichalcogenides can profoundly affect the superconducting state in few-layer samples. For example, in NbSe2, this effect combines with the reduced dimensionality to stabilize the superconducting state against magnetic fields up to ~35 T, and could lead to topological superconductivity. Here we report a two-fold rotational symmetry of the superconducting state in few-layer NbSe2 under in-plane external magnetic fields, in contrast to the three-fold symmetry of the lattice. Both the magnetoresistance and critical field exhibit this two-fold symmetry, and it also manifests deep inside the superconducting state in NbSe2/CrBr3 superconductor-magnet tunnel junctions. In both cases, the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute the behaviour to the mixing between two closely competing pairing instabilities, namely the conventional s-wave instability typical of bulk NbSe2 and an unconventional d- or p-wave channel that emerges in few-layer NbSe2. Our results demonstrate the unconventional character of the pairing interaction in few-layer transition metal dichalcogenides and highlight the exotic superconductivity in this family of two-dimensional materials.